Effect of silicon nitride PECVD growth on AlGaN/GaN HEMT dispersion and breakdown characteristicsFITCH, Robert; GILLESPIE, James; VIA, Dave et al.Proceedings - Electrochemical Society. 2004, pp 459-464, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

Pulsed Active Load-Pull Measurements for the Design of High-Efficiency Class-B RF Power Amplifiers With GaN HEMTsSEOK JOO DOO; ROBLIN, Patrick; BALASUBRAMANIAN, Venkatesh et al.IEEE transactions on microwave theory and techniques. 2009, Vol 57, Num 4, pp 881-889, issn 0018-9480, 9 p., 1Article

Short-channel effect limitations on high-frequency operation of ALGaN/GaN HEMTs for T-Gate devicesJESSEN, Gregg H; FITCH, Robert C; GILLESPIE, James K et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 10, pp 2589-2597, issn 0018-9383, 9 p.Article

Effective suppression of IV knee walk-out in AlGaN/GaN HEMTs for pulsed-IV pulsed-RF with a large signal network analyzerSEOK JOO DOO; ROBLIN, Patrick; JESSEN, Gregg H et al.IEEE microwave and wireless components letters. 2006, Vol 16, Num 12, pp 681-683, issn 1531-1309, 3 p.Article

Full-Wafer Characterization of AIGaN/GaN HEMTs on Free-Standing CVD Diamond SubstratesCHABAK, Kelson D; GILLESPIE, James K; FAILI, Firooz et al.IEEE electron device letters. 2010, Vol 31, Num 2, pp 99-101, issn 0741-3106, 3 p.Article

Progress towards III-nitrides HEMTs on free-standing diamond substrates for thermal management : Compound semiconductorsTREJO, Manuel; JESSEN, Gregg H; WALKER, Dennis E et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 2, pp 439-444, issn 1862-6300, 6 p.Article